NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE TO REDUCE WRITE VOLTAGE AND PERFORM HIGH SPEED OPERATION

摘要

PURPOSE: A non-volatile semiconductor memory device is provided to reduce a write voltage and perform a high speed operation by increasing the capacitance between a control gate and a floating gate. CONSTITUTION: A floating gate(15) runs in parallel with the first direction on a semiconductor substrate, formed on the semiconductor substrate by interposing a gate insulation layer(14) and having a cross section cut along the plane vertically extending to the semiconductor substrate. The floating gate includes a bottom surface in contact with the gate insulation layer and two slopes extending from both ends of the bottom surface upward. A pair of control gates(17) come in contact with an insulation layer(16) between gates formed on the two slopes of the floating gate.