发明名称 |
Method and structure to improve reliability of copper interconnects |
摘要 |
A method of forming a conductor structure on a surface of a wafer is provided. The surface of the wafer includes cavities separated by field regions. Initially, a barrier layer is deposited on the surface that includes cavities separated by field regions. A thin seed layer with a substantially uniform thickness is deposited on the barrier layer. The barrier layer and the seed layer portions in the cavities occupy less than 30% of the volume of each cavity. The remaining volume of each cavity is filled with a conductive material which is formed on the seed layer. The conductive layer has a substantially small thickness. After forming the conductive layer, the wafer is annealed to increase grain size in the conductive layer and the seed layer.
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申请公布号 |
US2004219779(A1) |
申请公布日期 |
2004.11.04 |
申请号 |
US20040858766 |
申请日期 |
2004.06.01 |
申请人 |
BASOL BULENT M.;TALIEH HOMAYOUN |
发明人 |
BASOL BULENT M.;TALIEH HOMAYOUN |
分类号 |
H01L21/288;H01L21/768;H01L23/532;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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