SEMICONDUCTOR DEVICE WITH STACKED METAL FILM

摘要

PROBLEM TO BE SOLVED: To improve the characteristics and life of a semiconductor device by enhancing a heat radiation property and reducing a strain and negative external factors caused by the diffusion of impurities. SOLUTION: In the laminate of a crystal growth film and a substrate with the crystal growth film being located above the substrate, electrodes are formed above the laminate or above and below the laminate. The thickness of the electrodes is at least 4μm (preferably, 6μm or above). COPYRIGHT: (C)2005,JPO&NCIPI