| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor storage device for realizing a multilayer gate insulating film capable of surely separating electric charges to a source and a drain, and trapping the electric charges even when adopting a micro-processed gate although the multilayer gate insulating film employs alumina for realizing excellent performance as a mirror flash memory. SOLUTION: A tunnel insulating film 2, an isolation insulating film 3, and a top insulating film 4 are sequentially formed on a substrate 1 as layers; a gate electrode 5 is formed on the top insulating film 4, the top insulating film 4 is etched to expose part of the isolation insulating film 3; the isolation insulating film 3 is etched to form a recessed part intruded to the lower part of the gate electrode 5; and a trap insulating film 7 that buries the recessed part and extends is formed to realize a separation type trap insulating film 7A separated by the isolation insulating film 3. COPYRIGHT: (C)2005,JPO&NCIPI
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