发明名称 MIXED TECHNOLOGY MEMS/BICMOS LC BANDPASS SIGMA-DELTA FOR DIRECT RF SAMPLING
摘要 An improved sigma-delta modulator is disclosed. The sigma-delta modulator (100) utilizes Micro Electro Mechanical System (MEMS) technology coupled wit h on-chip LC networks (110,118). MEMS switches are used to switch capacitors a nd inductors in and out of the network to alter the center frequency and tuning range of the sigma-delta modualtor (100), thus eliminating active components in each LC network (110,118). Furthermore, the use of MEMS switches improves the Q of each LC network (110,118) relative to previous on-chip sigma-delta modualtor designs. The increased Q of each LC network (110,118) reduces or eliminates the need for active Q-enhancement circuitry and improves the inherent filter shape within the loop of the sigma-delta modulator (100). In addition, the distortion of active compoenmtns with the loops (146,146', 148 , 148') of the sigma-delta modulator (100) also is improved. The addition of a decimator 252 to the chip presents a complete single chip LC sigma-delta analog-to-digital converter 250.
申请公布号 CA2502451(A1) 申请公布日期 2004.11.04
申请号 CA20042502451 申请日期 2004.02.12
申请人 RAYTHEON COMPANY 发明人 LINDER, LLOYD F.
分类号 H03M3/02;(IPC1-7):H03M3/02 主分类号 H03M3/02
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