| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for electroplating low-resistance metal wire for resolving the problem to fabricate the metal wire on large-area substrate through the technology of photolithographing and etching in the prior art, which improves the RC-delay characteristic of circuit on large- area substrate and reducces the number of masks for processing of a structure of gate overlap lightly-doped drain. SOLUTION: This method comprises steps of: forming an oxide layer on the substrate; depositing a first metal seed layer on the oxide layer; electroplating a first metal layer on the first metal seed layer, which has already been patterned; depositing an inter-layer; depositing a second metal seed layer; and electroplating a second metal layer on the second metal seed layer. Thus, the resistance values of a plurality of the metal wires on the substrate are lowered. COPYRIGHT: (C)2005,JPO&NCIPI
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