| 摘要 |
PROBLEM TO BE SOLVED: To reduce the number of wiring layers and most dominant characteristic by enabling it to suppress to suppress the increase of power consumption in a DRAM provided with a data masking function and a data line shift redundancy function. SOLUTION: For example, among sense amplification writing circuits 13 to which internal data mask lines DMN 0 to 5 are connected, when data lines are shifted by redundancy, mask signals are supplied to the sense amplification writing circuits 13 connected to data mask signal lines DM ä0}, ä1} different from those before the shifting through shift switching circuits 11a, 11b, and 11c, and mask signals are supplied to the sense amplification writing circuits 13 connected to the same data mask signal lines DM ä0}, ä1} as those before the shifting without through the shift switching circuits 11a, 11b and 11c. COPYRIGHT: (C)2005,JPO&NCIPI
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