发明名称 HIGH PURITY QUARTZ CRUCIBLE BY ELECTROLYTIC PURIFYING, METHOD OF MANUFACTURING THE SAME AND PULLING UP METHOD
摘要 PROBLEM TO BE SOLVED: To provide a high purity quartz crucible having the low concentration of impurities in the crucible inner peripheral part and a method of manufacturing the same. SOLUTION: In a method of improving the purity of a molten quartz glass layer by applying voltage between a mold and an arc electrode to move impurity metals contained in the molten quartz glass in the crucible inner periphery side to the outer periphery side in the manufacture of quartz crucible by arc-heating quartz raw material powder in the inside surface of a hollow rotary mold, the quartz glass crucible in which at least any of Na and Li contained in the 1 mm depth region from the inner surface is≤0.05 ppm is obtained by keeping an arc electrode potential to ground to±≤500 V, applying -1,000 V to -20,000 V voltage to the mold insulated to ground and applying high voltage to the unmelted quartz layer in the outer periphery side. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004307222(A) 申请公布日期 2004.11.04
申请号 JP20030098770 申请日期 2003.04.02
申请人 JAPAN SIPER QUARTS CORP;SUMITOMO MITSUBISHI SILICON CORP 发明人 KISHI HIROSHI;FUKUI MASANORI;TSUJI YOSHIYUKI
分类号 C03B20/00;C03B19/09;C30B15/00;C30B15/10;C30B29/06;(IPC1-7):C03B20/00 主分类号 C03B20/00
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