| 摘要 |
The method for manufacturing a CMOS image sensor is employed to pattern uniformly an overlying layer on a gate structure regardless of a gate width. The method includes steps of: preparing a semiconductor substrate by a predetermined process where a pixel area, a peripheral area and an input/output (I/O) area are defined by FOX therebetween; forming a first, a second and a third gate structures in the pixel, the peripheral and the I/O areas, respectively; forming a salicide barrier layer and a BARC layer over the resultant structure in sequence; forming a first photoresist mask on the BARC layer in the I/O area; carrying out a first etchback process by using the first photoresist mask as an etch mask; forming a second photoresist mask on the BARC layer in the pixel area; carrying out a second etchback process by using the second photoresist mask as the etch mask; and carrying out a third etchback process so as to expose top faces of the first and the second gate structures.
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