Verfahren zur Herstellung eines DRAM-Zellenkondensators,申请号DE19991007062-传众专利搜索

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发明名称	Verfahren zur Herstellung eines DRAM-Zellenkondensators
摘要
申请公布号	DE19907062(B4)	申请公布日期	2004.11.04
申请号	DE19991007062	申请日期	1999.02.19
申请人	SAMSUNG ELECTRONICS CO. LTD., SUWON	发明人	CHOI, CHANG-WON;LEE, CHANG-HWAN;JUNG, CHUL;HAN, MIN-SEOK
分类号	H01L27/108;H01L21/02;H01L21/768;H01L21/8242;(IPC1-7):H01L21/824	主分类号	H01L27/108
代理机构		代理人
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地址

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