Integrated circuit devices having an epitaxial pattern with a void region formed therein and methods of forming the same

摘要

An integrated circuit device includes a substrate. An epitaxial pattern is on the substrate and has a pair of impurity diffusion regions formed therein and a pair of void regions formed therein that are disposed between the pair of impurity diffusion regions and the substrate. Respective ones of the pair of impurity diffusion regions at least partially overlap respective ones of the pair of void regions. A gate electrode is on the epitaxial pattern between respective ones of the pair of impurity diffusion regions.