Semiconductor device structure facilitating electrostatic discharge protection and manufacturing method thereof

摘要

A structure of a semiconductor device facilitating electrostatic discharge protection at least includes a source terminal, a drain terminal, and a gate terminal, wherein a portion of the source terminal and a portion of the drain terminal are overlapped above the gate terminal to increase the coupling capacitance so that the electrostatic discharge protection device can be turned on quickly. Accordingly the response of the electrostatic discharge protection device to an electrostatic discharge can be effectively promoted.