| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element and a manufacturing method for the same, which prevent short circuit between the lower electrodes of a capacitor caused by the leaning and/or lifting of the electrodes upon forming the electrodes and increase an effective capacitor area to secure sufficient charge storage volume. <P>SOLUTION: The semiconductor element comprises a plurality of plugs (61), which are arranged at every identical distance and whose centers are at the intersections (01, 02) between X-axis virtual lines (X1, X2) and Y-axis virtual lines (Y1, Y2), respectively, and a plurality of capacitor lower electrodes (62), which are arranged at every identical distance and each of which corresponds and connects electrically to each plug (61). The lower electrodes (62) are of octagonal or circular shapes. The centers of a pair of the lower electrodes (62A, 62B) adjacent to each other in the direction of the Y-axis virtual line (Y1) are set at the points (01", 01') that give different X coordinates on the X-axis virtual lines (X1, X2), respectively, so that the area of each part of the electrodes (62A, 62B) that opposite in the direction of the Y-axis virtual line (Y1) is minimum. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
