发明名称 |
Method of forming a multi-layer semiconductor structure incorporating a processing handle member |
摘要 |
A method of forming a multi-layer semiconductor structure includes attaching a handle-member to a top surface of a first structure using a first interface. At least one region of a bottom surface of the first structure is etched to form at least a first via-hole for exposing a portion of a first conductive member defined on the first structure. A conductive material is disposed in the first via-hole such that a first end of the conductive material is in electrical communication with the first conductive member and a second end of the conductive material is exposed at the bottom surface of the first structure. A second interface is disposed over at least the second end of the conductive material, which serves as a bonding and/or electrical interface between the first conductive member defined on the first structure and a second structure of the multi-layer semiconductor device structure.
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申请公布号 |
US2004219765(A1) |
申请公布日期 |
2004.11.04 |
申请号 |
US20030749103 |
申请日期 |
2003.12.30 |
申请人 |
REIF RAFAEL;CHEN KUAN-NENG;TAN CHUAN SANG;FAN ANDY |
发明人 |
REIF RAFAEL;CHEN KUAN-NENG;TAN CHUAN SANG;FAN ANDY |
分类号 |
H01L21/60;H01L21/68;H01L23/48;H01L23/522;H01L25/065;(IPC1-7):H01L21/30;H01L21/46 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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