FORMING METHOD OF ISOLATION LAYER IMPROVING ISOLATION CHARACTERISTIC USING CHANNEL STOP ION-IMPLANTED LAYER

摘要

PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to improve isolation characteristics by forming a channel stop ion-implanted layer in a bottom of a trench. CONSTITUTION: A photoresist pattern defined with an alignment mark and an isolation region is formed on a substrate(101). The alignment mark is formed at the substrate, and a first trench is formed at the isolation region. The photoresist pattern is removed. A pad nitride pattern is formed to expose the first trench. A second trench with a relatively deep depth is formed in the isolation region. A channel stop ion-implanted layer(106) is formed by implanting dopants into the exposed substrate of the bottom of the second trench. An isolation layer(107) is then formed in the trench.