| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing an alkylsilane or alkylgermane useful as a CVD film-forming material in producing semiconductor devices. SOLUTION: The method for producing the alkylsilane or alkylgermane of general formula(2):R<SB>n</SB>MH<SB>4-n</SB>( wherein, R is a 1-3C lower alkyl; M is Si or Ge; and n is 1, 2 or 3 ) comprises carrying out a reaction between lithium hydride or calcium hydride and a compound of general formula(1): R<SB>n</SB>MX<SB>4-n</SB>( wherein, R is a 1-3C lower alkyl; X is a halogen atom; M is Si or Ge; and n is 1, 2 or 3 )( the corresponding alkylsilyl halide or alkylgermyl halide ) at 100-600°C to reduce the compound of general formula(1). COPYRIGHT: (C)2005,JPO&NCIPI
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