发明名称 |
Metal film production method |
摘要 |
A metal film production apparatus, comprising: a chamber accommodating a substrate having a barrier metal film of a metal nitride formed thereon: reducing gas supply means for supplying a reducing gas to a site above a surface of the substrate; surface treatment means which reacts the barrier metal film on the surface of the substrate in a reducing gas atmosphere to remove nitrogen atoms in a superficial layer of the barrier metal film, thereby decreasing a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film; a metallic etched member provided in the chamber; source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member; plasma generation means which converts the source gas containing the halogen into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas; and control means which makes a temperature of the substrate lower than a temperature of the etched member to form the metal component of the precursor as a film on the barrier metal film having the nitrogen content of the superficial layer relatively decreased.
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申请公布号 |
EP1473380(A2) |
申请公布日期 |
2004.11.03 |
申请号 |
EP20040017497 |
申请日期 |
2002.10.28 |
申请人 |
MITSUBISHI HEAVY INDUSTRIES, LTD. |
发明人 |
SAKAMOTO, HITOSHI;YAHATA, NAOKI;MATSUDA, RYUICHI;YOSHIYUKI, OOBA;NISHIMORI, TOSHIHIKO |
分类号 |
H01L21/28;C23C8/36;C23C16/34;C23C16/448;C23C16/452;C23C16/507;C23C16/56;C23C28/00;C23C30/00;H01L21/768;(IPC1-7):C23C14/00;C23C14/06;C23C28/02;C23C14/16;C23C14/02 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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