METHOD OF MANUFACTURING NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE FOR REALIZING FINENESS WITHOUT SHORT BETWEEN SOURCE AND DRAIN REGION

摘要

PURPOSE: A method of manufacturing a non-volatile semiconductor memory device is provided to realize the fineness without the short between a source region and a drain region due to a fine gate electrode. CONSTITUTION: A plurality of gate structures(100) are formed on a main surface(1f) of a semiconductor substrate(1). Each gate structure is composed of a floating gate electrode(8) and a control gate electrode(13) on the floating gate electrode. An interlayer dielectric(41) is formed on the resultant structure. A mask layer(56) is formed thereon. An opening(41h) is formed between adjacent gate structures by etching selectively the interlayer dielectric using the mask layer as an etching mask. A source region(143) is prolonged along adjacent floating gates into the substrate by performing an ion-implantation using the opening.