| 摘要 |
PURPOSE: An organometallic iridium compound, a production process thereof, and a process of producing a thin film are provided, which compound has a low melting point, improved vaporization characteristic and low film formation temperature on a substrate, so that the compound is useful for production of the iridium-containing thin film by using the CVD(chemical vapor deposition) process. CONSTITUTION: The organometallic iridium compound represented by formula (1) is provided, wherein R1 is hydrogen or lower alkyl; R2, R3, R4, R5, R6 and R7 are the same or different, and independently hydrogen, halogen, lower acyl, lower alkoxy, lower alkoxycarbonyl or lower alkyl, provided that a case where all of R2, R3, R4, R5, R6 and R7 are hydrogen simultaneously is excluded. The organometallic iridium compound represented by formula (2) is provided, wherein R8 is lower alkyl; R9, R10, R11 and R12 are the same or different, and independently hydrogen, halogen, lower acyl, lower alkoxy, lower alkoxycarbonyl or lower alkyl, provided that a case where R8, R9 and R11 are independently methyl, and R10 and R12 are hydrogen is excluded. The method for preparing the organometallic iridium compound represented by formula (1) comprises reacting iridium compound, cyclohexadiene derivatives of formula (3) and cyclopentadiene derivatives of formula (4), wherein M is alkali metal. The method for preparing the organometallic iridium compound represented by formula (2) comprises reacting iridium compound, butadiene derivatives of formula (5) and cyclopentadiene derivatives of formula (6).
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