发明名称 |
Narrow fins by oxidation in double-gate finfet |
摘要 |
A method of forming fins for a double-gate fin field effect transistor (FinFET) includes forming a second layer of semi-conducting material over a first layer of semi-conducting material and forming double caps in the second layer of semi-conducting material. The method further includes forming spacers adjacent sides of each of the double caps and forming double fins in the first layer of semi-conducting material beneath the double caps. The method also includes thinning the double fins to produce narrow double fins.
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申请公布号 |
US6812119(B1) |
申请公布日期 |
2004.11.02 |
申请号 |
US20030614052 |
申请日期 |
2003.07.08 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
AHMED SHIBLY S.;LIN MING-REN;WANG HAIHONG;YU BIN |
分类号 |
H01L21/3205;H01L21/336;H01L21/4763;H01L29/786;(IPC1-7):H01L21/320;H01L21/476 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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