| 摘要 |
This invention proposes to make memory using organic materials. The basic structure of the memory cell is a field effect organic transistor using a ferroelectric thin film polymer as gate dielectric. By controlling the gate voltage to polarize the thin film ferroelectric polymer polarized in either an "up" or "down" state, the source-drain current can be controlled between two different values under the same source-drain voltage. The source-drain current thus can be used to represent either a "0" or "1" state. The organic thin film transistor can be made from poly(phenylenes), thiophene oligomers, pentacene, polythiophene, perfluoro copper phthalocyanine or other organic thin films. The ferroelectric thin film can be poly(vinylidene fluoride) (PVDF), poly(vinyldiene-trifluoroethylene) (P(VDF-TrFE)) copolymers, odd-numbered nylons, cyanopolymers, polyureas, or other ferroelectric thin films. As the deposition of these organic thin films can be done at temperatures below 200° C., the memory cell can be made on many kinds of substrates including plastics.
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