发明名称 Method for transferring and stacking of semiconductor devices
摘要 A method is presented in which an active element, e.g. a semiconductor device, is embedded in a passive circuitry formed on a low-cost substrate, having good dielectric properties. After forming the active element on a first substrate, the active elements are singulated and transferred to a second substrate. The active element is bonded to this second substrate and the portion of the first substrate, on which this active element is created, is removed selectively to the active element and the low-cost substrate. On this second substrate passive circuitry may be present or it can be formed after the attachment of the active element. The passive circuitry is interconnected to the active element or other components or dies present on the low-cost substrate.
申请公布号 US6812078(B2) 申请公布日期 2004.11.02
申请号 US20030372548 申请日期 2003.02.21
申请人 IMEC, VZW;UMICORE 发明人 BORGHS STAF;BEYNE ERIC;VANDERSMISSEN RAF
分类号 H05K3/00;H01L21/68;H01L23/538;H01L23/66;H01L25/00;H01L31/18;(IPC1-7):H01L21/338 主分类号 H05K3/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利