| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that can reduce the deterioration of its frequency characteristics caused by substantial spread in the width of a base layer. SOLUTION: This semiconductor device is provided with a first-conductivity collector layer 102 formed on a semiconductor substrate 101, second-conductivity graft base layers 104 formed in the surface area of the collector layer 102, and second-conductivity first base lead-out regions 105 formed on the graft base layers 104. The device is also provided with second-conductivity second base lead-out regions 106 formed on top surfaces and side faces of the first base lead-out regions 105, a second-conductivity base layer 107 formed on the collector layer 102, and a first-conductivity emitter layer 108 formed in the surface area of the base layer 107. In addition, the device is also provided with an emitter lead-out region 110 formed on the emitter layer 108. COPYRIGHT: (C)2005,JPO&NCIPI
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