Redundancy control circuit for semiconductor memory, simultaneously applies voltage to some of program elements to program defect address indicating defect position

摘要

The circuit includes a number of program elements in which a defect address (XAD) indicating the position of a defect is programmed by dielectric breakdown upon application of a voltage (SVT). A voltage control part (101,105,106,107) simultaneously applies the voltage (SVT) to some of the program elements that are to be dielectrically broken down corresponding to the defect address. An independent claim is included for a semiconductor memory.