BUFFER LAYER FOR OXIDE SUPERCONDUCTIVE THIN FILM

摘要

PROBLEM TO BE SOLVED: To provide a buffer layer for growing an oxide superconductive thin film having a high critical current density, which is formed by a method wherein a CeO2layer is deposited at a high speed so as to restrain the occurrence of a (111) facet, and to prevent semicylindrical crystal grains from being formed even when the CeO2layer is thick to enable a completely c-axis oriented thin film of a Y oxide superconductor to grow on the buffer layer. SOLUTION: The buffer layer for the oxide superconductive thin film is formed through such a method wherein a CeO2buffer layer 2 of thickness 200 to 2,000Åis formed on an R plane sapphire board 1 at a deposition speed of 40 to 350Å/min and at deposition temperature of 630 to 780°C so as to obtain the oxide superconductive thin film having a high critical current density. COPYRIGHT: (C)2005,JPO&NCIPI