发明名称 |
Passivation layer for group III-V semiconductor devices |
摘要 |
A passivation layer for a heterojunction bipolar transistor (HBT) is formed from a relatively high bandgap material that is lattice-matched to the HBT components it passivates. By selecting the passivation layer to have a higher bandgap than the HBT components, minority carriers are contained within the HBT by the passivation layer. At the same time, the lattice matching of the passivation layer ensures a robust bond that prevents the subsequent formation of dangling bonds at the exterior surfaces of the base and collector (and/or other passivated surfaces), thereby minimizing surface leakage currents. |
申请公布号 |
US2004214401(A1) |
申请公布日期 |
2004.10.28 |
申请号 |
US20030422201 |
申请日期 |
2003.04.23 |
申请人 |
TRIQUINT SEMICONDUCTOR, INC. |
发明人 |
KRUEGER MARTHA R.;MACINNES ANDREW N. |
分类号 |
H01L21/331;H01L23/31;H01L29/737;(IPC1-7):H01L21/822 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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