| 发明名称 |
Method to selectively cap interconnects with indium or tin bronzes and/or oxides thereof and the interconnect so capped |
| 摘要 |
A method to selectively cap interconnects with indium or tin bronzes and copper oxides thereof is provided. The invention also provides the interconnect and copper surfaces so formed.
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| 申请公布号 |
US2004212089(A1) |
申请公布日期 |
2004.10.28 |
| 申请号 |
US20040852142 |
申请日期 |
2004.05.25 |
| 申请人 |
EDELSTEIN DANIEL C.;KANG SUNG KWON;MCGLASHAN-POWELL MAURICE;O'SULLIVAN EUGENE J.;WALKER GEORGE F. |
发明人 |
EDELSTEIN DANIEL C.;KANG SUNG KWON;MCGLASHAN-POWELL MAURICE;O'SULLIVAN EUGENE J.;WALKER GEORGE F. |
| 分类号 |
H01L21/288;H01L21/60;H01L21/768;H01L23/532;H05K3/24;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/288 |
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