发明名称 METHOD OF MANUFACTURING REFLECTION MASK, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a reflection mask capable of preventing decrease in the reflectance derived from the deposition of the oxide generated on the surfaces of a reflecting multi-layer film and a protective film in a process of manufacturing the masks. <P>SOLUTION: A method of manufacturing a reflection mask comprising a substrate 1, a reflecting multi-layer film 2 formed on the substrate 1 and reflecting the exposure light, and buffer layers 3a and absorbing layers 4a formed into a pattern shape on the reflecting multilayer film 2 for forming non-reflection region of the exposure light, the method of manufacturing the reflection mask, comprising forming a pattern by using a plasma process containing oxygen on a Cr-based buffer layer 3 formed adjacent on an uppermost layer of the reflecting multilayer film 2, and removing an oxide layer 5 deposited on the reflecting multilayer film 2 thus exposed, by conducting a pattern forming process thereon. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004304170(A) 申请公布日期 2004.10.28
申请号 JP20040070829 申请日期 2004.03.12
申请人 HOYA CORP 发明人 SHIYOUKI TSUTOMU
分类号 G02B5/08;G02B5/26;G02B7/182;G03F1/22;G03F1/24;G03F7/20;H01L21/027 主分类号 G02B5/08
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