| 摘要 |
The invention relates to a cryogenic detector device comprising a sensor that is based on a low-temperature effect, said sensor enabling the temperature increase that has been generated by the application of energy, e.g. by an X-ray quantum to be measured. The lower the thermal capacity of the sensor, the higher the temperature increase that results from the application of energy and consequently the greater the energy resolution of the sensor. As the thermal capacity is temperature-dependent, sensors of this type are usually operated in the range of between 50 and 400 mK, i.e. in the lower thermal capacity range. It has been shown that even at higher operating temperatures of the sensors, i.e. at higher specific thermal capacities ranging between 2.4 and 4.2 K, reasonable measurement results can still be achieved, provided that the construction volume of the individual sensors remains sufficiently small and in addition the effective sensor surface area is increased. |
