PROCESS FOR PRODUCING SINGLE CRYSTAL

摘要

A process for producing a single crystal according to the Czochralski method wherein a polycrystalline raw material is put in a crucible, then the polycrystalline raw material is melted by heating by means of a heater arranged so as to surround the crucible and thereafter a seed crystal is fused to the raw material melt and pulled up to thereby effect single crystal growth, characterized in that in the growth of single crystal whose resistivity has been regulated by boron doping, the single crystal growth is performed while controlling the maximum temperature of the crucible at 1600°C or below. In the production of boron-doped single crystal having high gettering capability, the single crystal can be produced by the above process at high productivity and at low cost while inhibiting any dislocation generation.