| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor film forming method which is capable of restraining light absorbing decomposition products from being formed in an oxide layer and improving a metal electrode layer effectively in reflecting properties, and to provide a semiconductor film. <P>SOLUTION: The semiconductor film forming method comprises a first lamination process of laminating a transparent electrode layer 2, a semiconductor layer 3, and an oxide layer 4 successively on a support 1; an oxidation process of oxidizing the surface of the oxide layer 4; and a second lamination process of laminating a metal electrode layer 5 on the oxide layer 4 whose surface has been oxidized. The oxidation process is carried out through natural oxidation, heating, and electrical discharge in an oxygen-containing atmosphere. Furthermore, the oxidation process is carried out at temperatures of 20 to 220°C. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
