Solid-state imaging apparatus with reduced leakage and noise

摘要

A solid-state imaging apparatus 100 includes a plurality of photosensitive cells 8, and a driving unit provided for driving the plurality of photosensitive cells 8. Each photosensitive cell 8 includes a photodiode 5 formed to be exposed on a surface of a semiconductor substrate for the purpose of accumulating signal charge obtained by subjecting incident light to photoelectric conversion, a transfer transistor for transferring signal charge accumulated by the photodiode 5, a floating diffusion layer 1 for temporarily accumulating signal charge transferred by the transfer transistor, and an amplifier transistor 2 for amplifying signal charge temporarily accumulated in the floating diffusion layer 1. A source/drain diffusion layer 3 provided in the amplifier transistor 2 is covered with a salicide layer 4, and the floating diffusion layer 1 is formed to be exposed on a surface of the semiconductor substrate.