发明名称 |
Light-emitting diode with enhanced brightness and method for fabricating the same |
摘要 |
A light-emitting diode with enhanced brightness and a method for fabricating the diode is provided. The light-emitting diode includes an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of windows formed in a highly doped layer. At least one conductive contact is formed on the bottom surface of the highly doped layer. A transparent material layer is formed in the windows. An adhesion layer is formed between the transparent material layer and a permanent substrate. A bottom electrode is formed on the bottom surface of the permanent substrate and an opposed electrode is formed on the top surface of the epitaxial LED structure. |
申请公布号 |
US6809341(B2) |
申请公布日期 |
2004.10.26 |
申请号 |
US20030384619 |
申请日期 |
2003.03.11 |
申请人 |
OPTO TECH UNIVERSITY |
发明人 |
HSU JUNG-KUEI;YU HSUEH-CHIH;LU HUNG-YUAN;CHANG CHUI-CHUAN;WANG KWANG-RU;TSAI CHANG-DA;LIN SAN BAO;HWANG YUNG-CHIANG;LIN MING-DER |
分类号 |
H01L33/00;H01L33/14;H01L33/38;H01L33/40;(IPC1-7):H01L27/15 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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