发明名称 Light-emitting diode with enhanced brightness and method for fabricating the same
摘要 A light-emitting diode with enhanced brightness and a method for fabricating the diode is provided. The light-emitting diode includes an epitaxial LED structure having at least one lighting-emitting active layer with a plurality of windows formed in a highly doped layer. At least one conductive contact is formed on the bottom surface of the highly doped layer. A transparent material layer is formed in the windows. An adhesion layer is formed between the transparent material layer and a permanent substrate. A bottom electrode is formed on the bottom surface of the permanent substrate and an opposed electrode is formed on the top surface of the epitaxial LED structure.
申请公布号 US6809341(B2) 申请公布日期 2004.10.26
申请号 US20030384619 申请日期 2003.03.11
申请人 OPTO TECH UNIVERSITY 发明人 HSU JUNG-KUEI;YU HSUEH-CHIH;LU HUNG-YUAN;CHANG CHUI-CHUAN;WANG KWANG-RU;TSAI CHANG-DA;LIN SAN BAO;HWANG YUNG-CHIANG;LIN MING-DER
分类号 H01L33/00;H01L33/14;H01L33/38;H01L33/40;(IPC1-7):H01L27/15 主分类号 H01L33/00
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