发明名称 |
Method of producing a thin layer of semiconductor material |
摘要 |
The invention relates to a method of producing a thin layer of semiconductor material including:a step of implanting ions through a flat face (2) of a semiconductor wafer in order to create a layer of microcavities, the ion dose being within a specific range in order to avoid the formation of blisters on the flat face,a thermal treatment step in order to achieve coalescence of the microcavitiesa possibly, a step of creating at least one electronic component (5) in the thin layer (6),a separation step of separating the thin layer (6) from the rest (7) of the wafer.
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申请公布号 |
US6809009(B2) |
申请公布日期 |
2004.10.26 |
申请号 |
US20010777516 |
申请日期 |
2001.02.06 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
ASPAR BERNARD;BRUEL MICHEL;POUMEYROL THIERRY |
分类号 |
H01L21/265;H01L21/02;H01L21/304;H01L21/762;H01L27/12;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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