发明名称 Selective deposition of a barrier layer on a metal film
摘要 A method to selectively deposit a barrier layer on a metal film formed on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermined number of deposition cycles followed by a purge step. Each deposition cycle comprises alternately adsorbing a refractory metal-containing precursor and a reducing gas on the metal film formed on the substrate in a process chamber.
申请公布号 US6809026(B2) 申请公布日期 2004.10.26
申请号 US20020322345 申请日期 2002.12.18
申请人 APPLIED MATERIALS, INC. 发明人 YOON HYUNGSUK ALEXANDER;YANG MICHAEL X.;ZHANG HUI;HONG SOONIL;XI MING
分类号 C23C16/44;C23C16/455;H01L21/285;H01L21/768;(IPC1-7):H01L21/476 主分类号 C23C16/44
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