发明名称 |
Selective deposition of a barrier layer on a metal film |
摘要 |
A method to selectively deposit a barrier layer on a metal film formed on a substrate is disclosed. The barrier layer is selectively deposited on the metal film using a cyclical deposition process including a predetermined number of deposition cycles followed by a purge step. Each deposition cycle comprises alternately adsorbing a refractory metal-containing precursor and a reducing gas on the metal film formed on the substrate in a process chamber.
|
申请公布号 |
US6809026(B2) |
申请公布日期 |
2004.10.26 |
申请号 |
US20020322345 |
申请日期 |
2002.12.18 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
YOON HYUNGSUK ALEXANDER;YANG MICHAEL X.;ZHANG HUI;HONG SOONIL;XI MING |
分类号 |
C23C16/44;C23C16/455;H01L21/285;H01L21/768;(IPC1-7):H01L21/476 |
主分类号 |
C23C16/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|