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发明名称
Field effect transistor and method for producing a field effect transistor
摘要
申请公布号
US6809379(B2)
申请公布日期
2004.10.26
申请号
US20030258354
申请日期
2003.02.24
申请人
INFINEON TECHNOLOGIES AG
发明人
KREUPL FRANZ
分类号
H01L21/28;H01L21/283;H01L21/3205;H01L29/41;H01L29/423;H01L29/49;H01L29/51;H01L29/78;H01L29/786;H01L49/00;(IPC1-7):H01L27/01
主分类号
H01L21/28
代理机构
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