| 摘要 |
PURPOSE: A method for forming an isolation layer of a semiconductor device is provided to substantially prevent moat by restraining oxidation of a trench top corner using an oxide spacer. CONSTITUTION: A pad oxide layer(13) and a pad nitride layer are sequentially formed on a silicon substrate(11). A trench is formed by sequentially etching the pad nitride layer, the pad oxide layer and the substrate using an STI(Shallow Trench Isolation) mask. A gap-fill oxide layer is formed in the trench. The gap-fill oxide layer is selectively removed and the pad nitride layer is removed. An oxide spacer(19a) is formed at both sidewalls of the protrudent gap-fill oxide layer. By removing the pad oxide layer, an isolation layer(17) is then formed.
|
