| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin film transistor having enhanced reliability. SOLUTION: A thin film transistor comprising a first gate electrode layer having a tapered part, a gate electrode having a second gate electrode layer narrower than the first gate electrode layer, a channel forming region, a lightly doped impurity region overlapping the gate electrode, a lightly doped impurity region not overlapping the gate electrode, and a semiconductor layer having a heavily doped impurity region is fabricated. Off current can thereby be decreased and deterioration of characteristics can be suppressed. COPYRIGHT: (C)2005,JPO&NCIPI |
