| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing compound semiconductor crystals, whose thickness and crystallinity are uniform, by a simple means. SOLUTION: In the method, after a liquid 3 composed of component elements of the compound is uniformly deposited on a substrate 2, a liquid or gas 5 composed of other component elements of the compound is contacted with on a liquid-deposited layer 4 to grow crystals. Particularly, the method is characterized by depositing the liquid 3 composed of the component elements of the compound on the substrate 2 uniformly using a spin-coating device. As an uniform deposition, the thickness of the liquid-deposited layer of the component elements of the compound can be controlled from 70% to 130% for the mean thickness, and the mean thickness of the liquid-deposited layer can be controlled from 1.0 nm to 100 nm. COPYRIGHT: (C)2005,JPO&NCIPI
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