| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory including a ferroelectric layer having good hysteresis characteristics, and to provide its fabricating process. SOLUTION: The process for fabricating a ferroelectric memory 1000 including a memory cell array 100 arranged with memory cells of ferroelectric capacitors 110 in matrix comprises steps for forming a multilayer of a lower electrode 12 and a hard mask 40a linearly on a substrate 10, patterning the hard mask 40a into a specified shape, forming an opening part 20 having the upper surface 12x of the lower electrode 12 as the bottom face in the insulating layer 72 by performing etching such that the upper surface 40x of the hard mask 40 is made flush with the upper surface 72x of the insulating layer 72 after the insulating layer 72 is formed on the lower electrode 12 and the hard mask 40 thereby removing the hard mask 40, forming a ferroelectric layer 14 in the opening part 20, and forming an upper electrode 16 on the ferroelectric layer 14 in the direction intersecting the lower electrode 12. COPYRIGHT: (C)2005,JPO&NCIPI
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