| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a high quality and high performance single crystal silicon carbide which has a micropipe defect density in the surface of≤1 piece/cm<SP>2</SP>, a broad terrace, and a surface with a high flatness. SOLUTION: A single crystal silicon carbide substrate used as a seed crystal and a polycrystalline silicon carbide substrate are superposed and they are placed in a closed vessel 5. The single crystal silicon carbide is epitaxially grown in a liquid phase on the single crystal silicon carbide substrate by previously heating the closed vessel 5 to a temperature of≥800°C in a preheating chamber 3 having pressure of≤10<SP>-5</SP>Pa, then reducing the pressure in the closed vessel 5 to pressure of≤10<SP>-5</SP>Pa, transporting the closed vessel 5 into a heating chamber previously heated to 1,400-2,300°C and in a reduced pressure of≤10<SP>-2</SP>Pa or in an inert gas atmosphere having prescribed reduced pressure, placing the vessel 5 in the chamber, and interposing a quite thin metallic silicon melt between the single crystal silicon carbide substrate and the polycrystalline silicon carbide substrate by heating the substrates to 1,400-2,300°C in a short period of time. COPYRIGHT: (C)2005,JPO&NCIPI
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