发明名称 METHOD OF MANUFACTURING POTASSIUM NIOBATE SINGLE CRYSTAL THIN FILM, SURFACE ACOUSTIC WAVE ELEMENT, FREQUENCY FILTER, FREQUENCY OSCILLATOR, ELECTRONIC CIRCUIT AND ELECTRONIC APPLIANCE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a single phase high quality KNbO<SB>3</SB>single crystal thin film having excellent surface morphology on various single crystal substrates, a surface acoustic wave element which has high k<SP>2</SP>and is frequency-band-widened, is small-sized and is excellently power-saved by providing the thin film obtained by the method, a frequency filter, a frequency oscillator, an electronic circuit and an electronic appliance. SOLUTION: In the method of manufacturing the potassium niobate single crystal thin film, plasma plume composed of K, Nb and O to be in a range of 0.5≤x≤x<SB>E</SB>when a temperature and molar composition ratio in an eutectic point E of KNbO<SB>3</SB>and 3K<SB>2</SB>O-Nb<SB>2</SB>O<SB>5</SB>under a prescribed oxygen partial pressure are expressed respectively by T<SB>E</SB>and x<SB>E</SB>(where, x expresses a molar ratio of potassium (K) to niobium (Nb) in the expression of K<SB>x</SB>Nb<SB>1-x</SB>0<SB>y</SB>) is supplied to the substrate 11. The KNbO<SB>3</SB>single crystal 12 is deposited from K<SB>x</SB>Nb<SB>1-x</SB>O<SB>y</SB>sedimented on the substrate 11 while keeping the temperature T<SB>S</SB>of the substrate 11 to be in a range of T<SB>E</SB>≤T<SB>S</SB>≤T<SB>m</SB>when the completely melted temperature in this state is expressed by T<SB>m</SB>. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004292228(A) 申请公布日期 2004.10.21
申请号 JP20030085872 申请日期 2003.03.26
申请人 SEIKO EPSON CORP 发明人 HIGUCHI AMAMITSU;IWASHITA SETSUYA;MIYAZAWA HIROSHI
分类号 C30B29/30;C23C14/08;C30B23/06;H03H3/08;(IPC1-7):C30B29/30 主分类号 C30B29/30
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