发明名称 |
Saturated transistor based temperature sensor |
摘要 |
A system for measuring a temperature of an electrical device is provided. The system comprises a transistor and a microprocessor. The transistor is part of an electrical device and is operable to perform a first function for the electrical device. For example, the transistor is operable in a saturated state to control activation of a pre-charge circuit in an electronic power assisted steering system. The microprocessor is responsive to a voltage at the transistor. The voltage of the transistor varies as a function of temperature (i.e., heat emitted from the electrical device). The microprocessor is operative to determine a temperature of the electrical device as a function of the voltage, where the sensing of temperature of the electrical device is different than the first function.
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申请公布号 |
US2004208226(A1) |
申请公布日期 |
2004.10.21 |
申请号 |
US20030413659 |
申请日期 |
2003.04.15 |
申请人 |
KHAYKIN BORIS;RUTKOWSKI DAVE |
发明人 |
KHAYKIN BORIS;RUTKOWSKI DAVE |
分类号 |
G01K7/01;(IPC1-7):G01K7/00 |
主分类号 |
G01K7/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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