发明名称 Saturated transistor based temperature sensor
摘要 A system for measuring a temperature of an electrical device is provided. The system comprises a transistor and a microprocessor. The transistor is part of an electrical device and is operable to perform a first function for the electrical device. For example, the transistor is operable in a saturated state to control activation of a pre-charge circuit in an electronic power assisted steering system. The microprocessor is responsive to a voltage at the transistor. The voltage of the transistor varies as a function of temperature (i.e., heat emitted from the electrical device). The microprocessor is operative to determine a temperature of the electrical device as a function of the voltage, where the sensing of temperature of the electrical device is different than the first function.
申请公布号 US2004208226(A1) 申请公布日期 2004.10.21
申请号 US20030413659 申请日期 2003.04.15
申请人 KHAYKIN BORIS;RUTKOWSKI DAVE 发明人 KHAYKIN BORIS;RUTKOWSKI DAVE
分类号 G01K7/01;(IPC1-7):G01K7/00 主分类号 G01K7/01
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