| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the characteristic of a capacity type semiconductor sensor device having a stack structure by preventing bad influence due to a parasitic capacity generated between bonding wires electrically connecting a sensor chip and a circuit chip. <P>SOLUTION: The sensor chip 12 is bonded on the circuit chip 13 through an adhesive film, and the circuit chip 13 is bonded to a package 14 by the adhesive. Four electrode pads of the sensor chip 12 are provided one by one in the central part of each side part, and the electrode pads provided corresponding to the above on the circuit chip 13 are electrically connected by the bonding wires 17 extended radially in four directions. The electrode pads of both right and left side parts of the circuit chip 13 and an electrode lead 14a of the package 14 are electrically connected to each other by the bonding wires. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
