发明名称 PHOTO DIODE ARRAY, ITS MANUFACTURING METHOD AND RADIATION DETECTOR
摘要 <p><P>PROBLEM TO BE SOLVED: To prevent generation of noise due to a damage given to regions corresponding to photo diodes at the time of packaging in a photodiode, its manufacturing method and a radiation detector. <P>SOLUTION: In a photodiode array 1 where a plurality of photodiodes 4 are formed in an array on the side of an n-type silicon substrate 3 opposite to the incident surface of a light L to be detected, spacers 6 having a specified height formed of resin, metal or an insulating material are provided in regions on the incident surface side not corresponding to regions where the photodiodes 4 are formed. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004296825(A) 申请公布日期 2004.10.21
申请号 JP20030087764 申请日期 2003.03.27
申请人 HAMAMATSU PHOTONICS KK 发明人 SHIBAYAMA KATSUMI
分类号 G01T1/20;H01L27/14;H01L27/144;H01L27/146;H01L31/0232;H01L31/09;H04N5/32;H04N5/335;H04N5/357;H04N5/369;(IPC1-7):H01L31/09 主分类号 G01T1/20
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