发明名称 |
Method of programming dual cell memory device to store multiple data states per cell |
摘要 |
A method of programming a multi-level, dual cell memory device. The method includes independently programming a first charge storing cell and a second charge storing cell to respective data states, the data states selected from a blank program level or one of a plurality of charged program levels. Also disclosed is a method of reading the multi-level, dual cell memory device using a plurality of reference currents.
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申请公布号 |
US2004208057(A1) |
申请公布日期 |
2004.10.21 |
申请号 |
US20030413800 |
申请日期 |
2003.04.15 |
申请人 |
HAMILTON DARLENE G.;TANPAIROJ KULACHET;HSIA EDWARD;HE YI |
发明人 |
HAMILTON DARLENE G.;TANPAIROJ KULACHET;HSIA EDWARD;HE YI |
分类号 |
G11C11/56;G11C16/04;G11C16/10;(IPC1-7):G11C11/34 |
主分类号 |
G11C11/56 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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