| 摘要 |
A method of fabricating a semiconductor device includes providing a wafer substrate, forming a first oxide layer over the wafer substrate using a single wafer low pressure chemical vapor deposition oxidation process, forming a second oxide layer over the first oxide layer by a single wafer oxidation process, forming a nitride layer over the second oxide layer using a low temperature and pressure deposition process, and growing a top oxide layer over the nitride layer.
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