| 摘要 |
A combination metrology tool is disclosed for analyzing samples, and in particular semiconductor samples. The device includes a first measurement module for determining electrical characteristics of the sample. In general, such a measurement module will monitor electrical characteristics to derive information such as carrier lifetimes, diffusion lengths and surface doping. The device also includes a second measurement module for determining compositional characteristics such as layer thickness, index of refraction and extinction coefficient. The second measurement module will include a light source for generating a probe beam which interacts with the sample. A detection system is provided for monitoring either the change in magnitude or polarization state of the probe beam. The output signals from both measurement modules are combined by a processor to more accurately evaluate the sample.
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