| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor thin film which has a high quality and an excellent optical stability, and also a photoelectric conversion device using the thin film. <P>SOLUTION: In the semiconductor thin film containing at least silicon and hydrogen, a ratio of a scattering peak intensity I<SB>TA</SB>of a TA mode to a scattering peak intensity I<SB>TO</SB>of a TO mode obtained from a Raman scattering spectrum is not larger than 0.35. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
