| 摘要 |
A deposition station of the invention comprises a chemical vapor deposition (CVD) chamber, a physical vapor deposition (PVD) chamber, at least a loadlock chamber, and a transfer chamber connected to the CVD and PVD chambers and the loadlock chamber. A vacuum is kept in the transfer chamber. To form a polysilicon film, a substrate is placed in the loadlock chamber, transits through the transfer chamber, and passes in the CVD chamber to form a buffer layer. After the formation of the buffer layer is completed, the substrate transits through the transfer chamber and passes in the PVD chamber to form an amorphous silicon film over the buffer layer. Once the PVD process is achieved, the substrate transits through the transfer chamber and passes in the loadlock chamber to be finally retrieved from the deposition station for other subsequent processing steps.
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